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| SMD Type P-Channel 2.5V Specified PowerTrench MOSFET KDS6375 IC IC Features -8 A, -20 V. RDS(ON) = 24m RDS(ON) = 32m Low gate charge(26nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability @ VGS = -4.5 V @ VGS =-2.5V Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power Dissipation for Single Operation (Note 1a) Power Dissipation for Single Operation (Note 1b) Power Dissipation for Single Operation (Note 1c) Operating and Storage Temperature Thermal Resistance Junction to Ambient (Note 1a) Thermal Resistance Junction to Ambient (Note 1c) Thermal Resistance Junction to Case (Note 1) TJ, TSTG R R R JA JA JC Symbol VDSS VGS ID Rating -20 8 -8 -50 2.5 Unit V V A A PD 1.2 1 -55 to 175 50 125 25 W /W /W /W www.kexin.com.cn 1 SMD Type KDS6375 Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse Gate Threshold Voltage(Not 2) Gate Threshold Voltage Temperature Coefficient(Not 2) IDSS IGSSF IGSSR VGS(th) Symbol BVDSS Testconditons VGS = 0 V, ID = -250 ID = -250 A Min -20 -13 -1 100 -100 A -0.4 -0.7 3 14 19 18 -50 35 2694 VDS = -10 V, VGS = 0 V,f = 1.0 MHz 480 229 12 VDD = -10 V, ID = -1 A,VGS = -4.5 V, RGEN = 6 (Note 2) 9 124 57 26 VDS = -10 V, ID =-8 A,VGS=-4.5V(Note 2) 5 6 -2.1 VGS = 0 V, IS = -2.1A (Not 2) -0.7 -1.2 22 17 197 92 36 24 32 39 -1.5 Typ Max IC IC Unit V mV/ A nA nA V mV/ A, Referenced to 25 VDS = -16 V, VGS = 0 V VGS = 8V, VDS = 0 V VGS = -8 V, VDS = 0 V VDS = VGS, ID = -250 ID = -250 A, Referenced to 25 VGS = -4.5 V, ID =-8 A Static Drain-Source On-Resistance(Not 2) RDS(on) VGS = -2.5 V, ID = -7 A VGS = -4.5 V, ID =-8 A,TJ = 125 On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = -4.5 V, VDS = -5V VDS = -5 V, ID = -8A m A S pF pF pF ns ns ns ns nC nC nC A V 2 www.kexin.com.cn |
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